Substrate effect and temperature dependence of thermal transport characteristics in GaN-based graphene

Substrate effect and temperature dependence of thermal transport characteristics in GaN-based graphene
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GaN基石墨烯热传输特性的衬底效应和温度依赖性

DOI:
10.1016/j.ijheatmasstransfer.2021.121266
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发表时间:
2021-07
影响因子:
5.2
通讯作者:
Chen Guofu
Chen Guofu
中科院分区:
工程技术2区
文献类型:
--
作者:
Bao Wenlong;Wang Zhaoliang;Chen Guofu

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石墨烯/GaN纳米复合材料在GaN基LED中具有重要的应用。由于这种复合材料的电输运特性已被广泛研究,热输运性能还没有系统的研究。本文采用分子动力学(MD)模拟方法研究了悬浮石墨烯和GaN支撑石墨烯的热输运性质,包括长度、衬底效应和温度依赖性。当长度为250 nm时,GaN负载石墨烯的热导率为1567.5±46.4 W/mK,约为室温下悬浮石墨烯热导率的85%。更有趣的是,通过改变声子色散和态密度,我们用一个理论模型来描述衬底效应,这个模型的结论与我们的分子动力学模拟一致。此外,通过光谱能量密度(SED)分析,揭示了衬底效应和温度依赖性的潜在机制。我们的研究报告了GaN对石墨烯热导率的有限抑制,这为GaN基LED的热管理提供了见解。
Graphene/GaN nanocomposites have important applications in GaN-based LEDs. Since the electrical transport characteristics of this composite have been widely studied, the thermal transport properties have not been systematically studied. Herein, the thermal transport properties of suspended graphene and graphene supported by GaN including length, substrate effect and temperature dependence are carefully studied by molecular dynamics (MD) simulation. When the length is 250 nm, the thermal conductivity of GaN-supported graphene is 1567.5±46.4 W/mK, which is about 85% of that for the suspended graphene at room temperature. More interesting, a theoretical model is used to describe substrate effect by modifying the phonon dispersion and density of states, and the conclusion of this model is consistent with our MD simulations. Moreover, the underlying mechanism of substrate effect and temperature dependence is revealed by spectral energy density (SED) analysis. Our study reports the finite suppression of GaN on the thermal conductivity of graphene, which provides insights for thermal management of GaN-based LEDs.
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