Photo-carrier doping effect on high-order harmonic generation in monolayer WSe2

Photo-carrier doping effect on high-order harmonic generation in monolayer WSe2
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DOI：
10.1109/irmmw-thz46771.2020.9370876
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发表时间：
2020-11
期刊：
2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
影响因子：
--
通讯作者：
K. Nagai;K. Uchida;S. Kusaba;T. Endo;Y. Miyata;Koichiro Tanaka
K. Nagai;K. Uchida;S. Kusaba;T. Endo;Y. Miyata;Koichiro Tanaka
中科院分区：
其他
文献类型：
--
作者：
K. Nagai;K. Uchida;S. Kusaba;T. Endo;Y. Miyata;Koichiro Tanaka

文献摘要

相似文献

我们研究了单层 WSe2 中光载流子掺杂对高次谐波产生的影响。由光载流子掺杂引起的谐波强度变化表明，带间机制和带内机制在比吸收边缘较低的能量区域中是可比的，而带间机制在较高能量区域中占主导地位。
We have investigated the photo-carrier doping effect on high-order harmonic generation in monolayer WSe2. The intensity change of harmonics induced by the photo-carrier doping suggests that the interband and intraband mechanism is comparable in the lower energy region than the absorption edge whereas the interband mechanism is dominant in the higher energy region.