Stress and structural relaxation in amorphous hydrogenated carbon films
Stress and structural relaxation in amorphous hydrogenated carbon films
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DOI：
10.1063/1.1637447
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发表时间：
2004-01
影响因子：
4
通讯作者：
M. Lejeune;M. Benlahsen;R. Bouzerar
中科院分区：
文献类型：
--
作者：
M. Lejeune;M. Benlahsen;R. Bouzerar
本文详细研究了氢化非晶（a-C：H）薄膜中残余应力与原子键结构之间的关系。研究了弛豫过程与生长过程中拉曼特征演化和诱导的度量畸变的关系。对拉曼光谱数据的分析表明，度量畸变本身不能解释沉积薄膜中的应力松弛。一些拓扑缺陷的产生，如奇环，需要解释的拉曼功能的行为和结构弛豫的a-C：H样品。
The correlation between the residual stress and the atomic-bond structure has been investigated in detail in hydrogenated amorphous films (a-C:H). The relaxation process was studied in relation with the Raman characteristics evolution and the induced metric distortions during growth. The analysis of the Raman data shows that the metric distortions alone cannot explain the stress relaxation in the deposited films. The creation of some topological defects, such as odd rings, is required to explain both the Raman features behavior and the structural relaxation in the a-C:H samples.