Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers
Contactless Thermal Boundary Resistance Measurement of GaN-on-Diamond Wafers
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DOI：
10.1109/led.2014.2350075
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发表时间：
2014-09
影响因子：
4.9
通讯作者：
J. Pomeroy;Roland B. Simon;Huarui Sun;D. Francis;F. Faili;D. Twitchen;Martin Kuball
中科院分区：
文献类型：
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作者：
J. Pomeroy;Roland B. Simon;Huarui Sun;D. Francis;F. Faili;D. Twitchen;Martin Kuball
低热阻金刚石衬底GaN晶片相对于SiC衬底GaN器件提供增强的热管理。GaN/金刚石界面热阻对总器件热阻的贡献很大，因此必须将其最小化，以获得金刚石上GaN的最大益处。开发了一种非接触式热反射测量技术，可在晶片生长后和器件制造前使用，能够快速反馈生长参数对界面热阻的影响。通过将GaN和金刚石之间的电介质厚度从90 nm降低到50 nm，实现了GaN/金刚石界面电阻的2倍降低，从而使GaN-金刚石晶体管的功耗增加了25%。
Low thermal resistance GaN-on-diamond wafers offer enhanced thermal management with respect to GaN-on-SiC devices. The GaN/diamond interfacial thermal resistance can contribute significantly to the total device thermal resistance and must therefore be minimized to gain the maximum benefit from GaN-on-diamond. A contactless thermoreflectance measurement technique has been developed, which can be used after wafer growth and before device fabrication, enabling rapid feedback about the influence of growth parameters on interfacial thermal resistance. A measured 2× reduction in the GaN/diamond interfacial resistance is achieved by reducing the dielectric thickness between the GaN and diamond from 90 to 50 nm, enabling a potential 25% increase in transistor power dissipation for GaN-on-diamond.