Complex Dependence of Optoelectronic Properties of Metal Halide Perovskite Thin Films on Quantum Dot Decoration Layers
Complex Dependence of Optoelectronic Properties of Metal Halide Perovskite Thin Films on Quantum Dot Decoration Layers
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DOI：
10.1021/acs.jpcc.3c03832
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发表时间：
2023-08-29
影响因子：
3.7
通讯作者：
Ghosh, Sayantani
中科院分区：
文献类型：
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作者：
Arteaga, Jorge;Cherrette, Vivien;Ghosh, Sayantani
用光谱技术研究了CH3NH3PbI3(甲基碘化铅或MAPI)薄膜与金属卤化物钙钛矿量子点的相互作用。通过比较Cs+和CH3NH3+离子以及不同的表面钝化方法，包括导电和绝缘分子配体，对PQD与MAPI薄膜之间的电荷转移作用进行了调节。绘制了静态和动态的MAPI发射随温度、激发波长和激发功率的函数图，结果表明，低密度的PQD改善了MAPI的光致发光(PL)特性，包括强度增加和平均复合寿命。然而，高密度的PQD具有不利的影响，导致MAPI发射的光谱蓝移和电荷载流子寿命的缩短。这种PQD对MAPI性质的复杂调制表明，在优化光电子应用中的这种异质结构时，需要考虑的不同因素之间存在复杂的相互作用。
The interaction between CH3NH3PbI3 (methylammonium lead iodide or MAPI) thin films and metal halide perovskite quantum dots (PQDs) was studied using spectroscopic techniques. By comparing PQDs with Cs+ and CH3NH3+ cations and different surface passivation, including both conducting and insulating molecular ligands, charge transfer interactions between the PQDs and the MAPI films were tuned. Mapping static and dynamic MAPI emission as functions of temperature, excitation wavelength, and excitation power revealed that a low density of PQDs improved MAPI photoluminescence (PL) properties, including increased intensity and average recombination lifetime. However, a high density of PQDs had detrimental effects, resulting in a spectral blue shift of MAPI emission and a shortening of charge carrier lifetimes. This complex modulation of MAPI properties by PQDs indicates an intricate interplay between different factors that need to be considered in optimizing such heterostructures for optoelectronic applications.