Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °C)
Morphology of Ge thin films crystallized by Au-induced layer exchange at low temperature (220 °C)
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DOI：
10.1116/6.0001774
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发表时间：
2022-05
期刊：
影响因子：
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通讯作者：
N. Sunthornpan;K. Kimura;K. Kyuno
中科院分区：
文献类型：
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作者：
N. Sunthornpan;K. Kimura;K. Kyuno
研究了初始非晶Ge（a-Ge）层厚度对低温（220 °C）金诱导晶化行为的影响。最初，晶体Ge（c-Ge）层的覆盖率随着a-Ge层厚度的增加而增加。然而，a-Ge层厚度的进一步增加导致第一层顶部上的第二Ge层的覆盖率和外观的减小，这导致表面粗糙度的增加。与顶层相比，底部c-Ge层具有更好的晶体质量。通过对a-Ge（46 nm）/Au（29 nm）双层膜退火，仅用少量的第二层就得到了最大的覆盖率为97%，霍尔效应空穴迁移率高达85 cm 2/Vs。
The influence of the original amorphous Ge (a-Ge) layer thickness on the crystallization behavior by Au-induced crystallization at low temperature (220 °C) is studied. Initially, the coverage of the crystalline Ge (c-Ge) layer increases as the a-Ge layer thickness increases. A further increase in a-Ge layer thickness, however, results in the decrease of the coverage and appearance of the second Ge layer on top of the first layer, which results in the increase of surface roughness. The bottom c-Ge layer has a better crystal quality compared to the top layer. The maximum coverage of ∼97% with only a small amount of second layer is obtained by annealing an a-Ge(46 nm)/Au(29 nm) bilayer and a Hall effect hole mobility of as high as ∼85 cm2/V s is achieved.