Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors
Small-signal characteristics of fully-printed high-current flexible all-polymer three-layer-dielectric transistors
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DOI：
10.1016/j.orgel.2016.04.037
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发表时间：
2016-07-01
影响因子：
3.2
通讯作者：
Ellinger, Frank
中科院分区：
文献类型：
--
作者：
Kheradmand-Boroujeni, Bahman;Schmidt, Georg C.;Ellinger, Frank
采用高通量印刷技术，在聚对苯二甲酸乙二醇酯塑料衬底上制备了全聚合物、半透明、三层介质(3L)有机场效应晶体管(OFET)。给出了3L场效应管的模拟小信号特性，并与基于单层介质和金属栅电极的3L场效应管进行了比较。该3L晶体管可承受50 V电压，可连续驱动50 mU A/mm，具有43分贝的出色本征增益(A(V0))、0.85 cm(2)/V的等效迁移率和68 kHz的渡越频率(f(T))，非常适合于驱动印刷压电扬声器和柔性音频系统等应用。在频域中测量了3L叠层中弛豫铁电高k层对栅电容g(M)和A(V0)的影响。此外，与铜粉墨水相比，PEDOT：PSS与聚合物介电材料有更好的界面。进行了五个小时的小信号和大信号偏置压力测试。提出了一种新的直接A(V0)测量技术和一种改进的跨导提取方法。(C)2016爱思唯尔B.V.保留所有权利。
All-polymer, semi-transparent, three-layer-dielectric (3L) organic field effect transistors (OFETs) are fabricated on polyethylene terephthalate plastic substrate, using high-throughput printing techniques. Analog small-signal characteristics of the 3L OFET are presented and are compared against the previous version of this technology, which was based on a single-layer dielectric and a metal gate electrode. The 3L transistor withstands 50 V, can continuously drive 50 mu A/mm, reaches an excellent intrinsic-gain (A(v0)) of 43 dB, an equivalent mobility of 0.85 cm(2)/V, and a transit frequency (f(T)) of 68 kHz, well suited for applications such as driving printed piezoelectric loudspeakers and flexible audio systems. The effects of the relaxor-ferroelectric high-k layer in the 3L stack on the gate capacitance, g(m), and A(v0) are measured in the frequency domain. In addition, it is observed that PEDOT:PSS makes a better interface with polymer dielectric comparing to copper particle ink. Five-hour small- and large-signal bias stress tests are performed. A novel direct A(v0) measurement technique, and an improved transconductance extraction method are also presented. (C) 2016 Elsevier B.V. All rights reserved.