Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires
Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires
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DOI：
10.1021/nl103773e
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发表时间：
2011-02-01
期刊：
影响因子：
10.8
通讯作者：
Murakami, Kouichi
中科院分区：
文献类型：
--
作者：
Fukata, Naoki;Ishida, Shinya;Murakami, Kouichi
了解硅纳米线中掺杂原子的动力学行为是利用硅纳米线实现低功耗和高速晶体管器件的关键。利用B局域振动峰和光学声子峰的Fano展宽，观察了硼（B）和磷（P）原子在B和P掺杂硅纳米线中的热氧化偏聚行为。结果表明，B原子优先偏聚在表面氧化层中，而P原子则倾向于聚集在硅纳米线界面附近的硅区。研究了硅纳米线中P原子的径向分布，证明了P原子和B原子的不同偏聚行为。
Gaining an understanding the dynamic behaviors of dopant atoms in silicon nanowires (SiNWs) is the key to achieving low-power and high-speed transistor devices using SiNWs. The segregation behavior of boron (B) and phosphorus (P) atoms in B- and P-doped SiNWs during thermal oxidation was closely observed using B local vibrational peaks and Fano broadening in optical phonon peaks of B-doped SiNWs by micro-Raman scattering Electron spin resonance (ESR) signals from conduction electrons were used for P-doped SiNWs. Our results showed that B atoms preferentially segregate in the surface oxide layer, whereas P atoms tend to accumulate in the Si region around the interface of SiNWs. The radial distribution of P atoms in SiNWs was also investigated to prove the difference segregation behaviors between of P and B atoms.