Effect of substitution of Sn for Bi on structural and electrical transport properties of SnS thin films
Effect of substitution of Sn for Bi on structural and electrical transport properties of SnS thin films
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DOI：
10.1007/s10853-010-4207-z
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发表时间：
2010-05-01
影响因子：
4.5
通讯作者：
Gordillo, G.
中科院分区：
文献类型：
--
作者：
Dussan, A.;Mesa, F.;Gordillo, G.
在这项工作中，报告了Bi浓度对通过金属前驱体与单质硫（硫化）在两阶段过程中化学反应生长的SnS薄膜的结构和电输运性质的影响。XRD测试结果表明，Sn和Bi硫化后的样品分别生长在Sn相和Bi(2)S(3)相中，而Sn:Bi合金硫化后的样品则生长在多种相的混合物中。通过sigma和T测量，重点研究了Bi浓度对sn:Bi薄膜输运性质的影响。为了确定主要的运输机制，在两个不同的温度范围内分析了sigma与T曲线。在大于300 K的温度范围内，电导率主要受导带扩展态自由载流子输运的影响，而在250 K以下的温度范围内，电导率主要受VRH（可变跳程）输运机制的影响。
In this work, results are reported concerning the effect of the Bi concentration on the structural and electrical transport properties of SnS thin films, grown through a chemical reaction of the metallic precursors with elemental sulfur (sulfurization) in a two-stage process. XRD measurements revealed that the samples deposited by sulfurization of Sn or Bi grow in the SnS and Bi(2)S(3) phases, respectively, whereas those obtained by sulfurization of a Sn:Bi alloy grow with a mixture of several phases. Special emphasis was placed on studying through sigma versus T measurements, the effect of the Bi concentration on the transport properties of SnS:Bi films. To identify the dominant transport mechanisms, the sigma versus T curves were analyzed in two different temperature ranges. It was also found that in the range of temperatures greater than 300 K, the conductivity is predominantly affected by transport of free carriers in extended states of the conduction band, whereas in the range of temperatures below 250 K, the conductivity is dominated by the VRH (variable range hopping) transport mechanism.