21-kV SiC BJTs With Space-Modulated Junction Termination Extension
21-kV SiC BJTs With Space-Modulated Junction Termination Extension
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DOI：
10.1109/led.2012.2215004
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发表时间：
2012-10
影响因子：
4.9
通讯作者：
H. Miyake;T. Okuda;H. Niwa;T. Kimoto;J. Suda
中科院分区：
文献类型：
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作者：
H. Miyake;T. Okuda;H. Niwa;T. Kimoto;J. Suda
我们在这里报告20千伏级小面积（0.035 mm 2）4 H-SiC双极结型晶体管。我们实现了边缘终端技术，具有两个区域结终端扩展和空间调制环。通态特性显示电流增益为63，比导通电阻为321 mΩ·cm 2，略低于SiC单极极限。我们在0.1 mA/cm 2的漏电流下实现了21 kV的开基阻断电压，这是任何半导体开关器件中最高的阻断电压。
We report here 20-kV-class small-area (0.035 mm2) 4H-SiC bipolar junction transistors. We implemented edge termination techniques featuring two-zone junction termination extension and space-modulated rings. On-state characteristics showed a current gain of 63 and a specific on-resistance of 321 mΩ·cm2, which is slightly below the SiC unipolar limit. We achieved the open-base blocking voltage of 21 kV at a leakage current of 0.1 mA/cm2, which is the highest blocking voltage among any semiconductor switching devices.