ZVS of Power MOSFETs Revisited
ZVS of Power MOSFETs Revisited
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DOI：
10.1109/tpel.2016.2574998
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发表时间：
2016-06
影响因子：
6.7
通讯作者：
M. Kasper;R. Burkart;G. Deboy;J. Kolar
中科院分区：
文献类型：
--
作者：
M. Kasper;R. Burkart;G. Deboy;J. Kolar
为了实现高效率、高功率密度的变流器，需要具有零电压开关(ZVS)能力的变流器拓扑。这封信表明，为了确定是否在给定的工作点提供零电压，必须考虑MOSFET中存储的电荷，并且必须满足条件LI2≥2Qoss。在不完全软开关的情况下，会出现非零损耗，本文对此进行了解析推导和实验验证。此外，还讨论了硅超结MOSFET的非理想软开关行为问题。
Aiming for converters with high efficiency and high power density demands converter topologies with zero-voltage switching (ZVS) capabilities. This letter shows that in order to determine whether ZVS is provided at a given operating point, the stored charge within the mosfets has to be considered and the condition LI2≥2Qoss has to be fulfilled. In the case of incomplete soft switching, nonzero losses occur which are analytically derived and experimentally verified in this letter. Furthermore, the issue of nonideal soft-switching behavior of Si superjunction mosfets is addressed.