Carrier selective metal-oxides for self-doped silicon nanowire solar cells
Carrier selective metal-oxides for self-doped silicon nanowire solar cells
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DOI：
10.1016/j.apsusc.2019.06.286
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发表时间：
2019-10-30
影响因子：
6.7
通讯作者：
Paul, Shashi
中科院分区：
文献类型：
--
作者：
Manjunatha, Krishna Nama;Paul, Shashi
对包括太阳能电池在内的任何电子设备来说，选择一种具有多种用途的材料总是有益的。本研究探讨了氧化镍（NiO）作为一种多用途材料来克服传统太阳能电池中观察到的潜在问题。一个概念验证装置被制造出来，以了解NiO的有效空穴传输，同时通过I-V测量确定阻挡电子，显示抑制暗电流和增强来自太阳能电池的功率转换。硅纳米线（SiNWs）表面缺陷的增强导致载流子收集不良，可以通过选择宽带隙金属氧化物来改善，这种金属氧化物对一个载流子（电子/空穴）具有高带偏，而对另一个载流子（空穴/电子）具有可忽略的带偏。此外，对于夹在不同金属电极和SiNWs之间的NiO，费米能级去钉，表明选择合适的金属电极是提高太阳能电池效率的另一个关键因素；在这项工作中进行了实验研究。由于本研究中制备的太阳能电池没有使用高温扩散P-N结分离载流子，也没有使用有毒气体掺杂SiNWs。
Selection of a material that serves multiple purposes is always beneficial for any electronic device including solar cells. This study investigates nickel oxide (NiO) as a multipurpose material to overcome the potential issues observed in traditional solar cells. A proof-of concept device is fabricated to understand the efficient hole transport from NiO while blocking electrons as determined by I-V measurements showing suppression of dark current and enhancement in the power conversion from the solar cell. Enhanced surface defects in the silicon nanowires (SiNWs) leading to the poor carrier collection is possible to be improved by the selection of wide bandgap metal-oxides that show high band offset for one carrier (electron/hole) while negligible band offset for another carrier (hole/electron) is discussed. Furthermore, Fermi level de-pinning for NiO sandwiched between different metal electrodes and SiNWs, signifying that the selection of appropriate metal electrodes is another key factor in improving the efficiency of solar cells; which is experimentally studied in this work. As fabricated solar cells in this work do not use high temperature diffused P-N junction to separate the charge carriers neither toxic gases for doping SiNWs.