Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Epitaxially Grown at 4501℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, June 5-8, 2001 Abs.. No.D-X,3.

Y. Shimamune 等人：“Doping and Electrical Characteristics of Si Films Epitcentrically Grown at 4501℃ by Alternately Supplied PH_3 and SiH_4”2001 年春季会议，欧洲材料研究学会，法国斯特拉斯堡，2001 年 6 月 5-8 日摘要编号D-X，3。