The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor

The dependence of crystallization on temperature in the nanosecond timescale for GeTe-based fast phase-change resistor
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DOI:
10.1016/j.cplett.2016.03.002
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发表时间:
2016-04
影响因子:
2.8
通讯作者:
Hui Zhang;Yu Zhang;Y. Yin;S. Hosaka
Hui Zhang;Yu Zhang;Y. Yin;S. Hosaka
中科院分区:
化学4区
文献类型:
--
作者:
Hui Zhang;Yu Zhang;Y. Yin;S. Hosaka

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