Hot-wire chemical vapour deposition low-loss a-Si:H waveguides for silicon photonic devices
Hot-wire chemical vapour deposition low-loss a-Si:H waveguides for silicon photonic devices
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发表时间：
2019-02
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通讯作者：
S. Oo;A. Tarazona;A. Khokhar;R. Petra;Y. Franz;G. Mashanovich;G. Reed;A. Peacock;H. Chong
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作者：
S. Oo;A. Tarazona;A. Khokhar;R. Petra;Y. Franz;G. Mashanovich;G. Reed;A. Peacock;H. Chong
我们通过热线化学气相沉积 (HWCVD) 演示了低损耗氢化非晶硅 (a-Si:H) 波导。通过拉曼光谱研究和分析了不同沉积温度下非晶硅氢化的影响。我们获得了在 230°C 沉积的光学质量 a-Si:H 波导，其在 480 cm−1 处具有强拉曼峰位移，峰宽 FWHM 为 68.9 cm−1，键角偏差为 8.98°。光传输测量显示在 1550 nm 波长处具有 0.8 dB/cm 的低传播损耗，这是据我们所知首次报道的 HWCVD a-Si:H 波导
We demonstrate low-loss hydrogenated amorphous silicon (a-Si:H) waveguides by hot-wire chemical vapor deposition (HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm−1, peak width FWHM of 68.9 cm−1, and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at 1550 nm wavelength, which is the first to our knowledge reported for HWCVD a-Si:H waveguide