Simulation of electron transport in (0001) and (112¯0) 4H-SiC inversion layers
Simulation of electron transport in (0001) and (112¯0) 4H-SiC inversion layers
复制标题
(0001) 和 (112´0) 4H-SiC 反型层中电子传输的模拟
DOI：
10.1063/1.3212970
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发表时间：
2009
影响因子：
3.2
通讯作者：
N. Goldsman
中科院分区：
文献类型：
--
作者：
G. Pennington;N. Goldsman
采用蒙特卡罗模拟方法研究了4 H碳化硅金属氧化物半导体场效应晶体管（MOSFET）反型层中的电子输运。电子子带结构是沿着自洽地解决与垂直场在氧化物-氧化物界面。反演通道散射率，由于声学和极性光学声子，电离掺杂剂，陷阱电荷，和界面粗糙度被认为是。比较了（0001）和（112 <$0）取向反型层内的输运。MOSFET低场迁移率的模拟，结合先前发表的阈值电压和电荷密度的实验结果，发现同意与实验结果。由于界面态的减少，（112 <$0）沟道的迁移率（90 cm 2/V s）比（0001）沟道的迁移率（<40 cm 2/V s）大得多。 此外，迁移率的温度系数约为−3/2（112 <$0）层由于占主导地位的声子散射和+1.
Monte Carlo simulations are used to investigate electron transport in the inversion layer of a 4H silicon carbide metal-oxide-semiconductor field-effect transistor (MOSFET). The electronic subband structure is solved self-consistently along with the perpendicular field at the semiconductor-oxide interface. Inversion channel scattering rates due to acoustic and polar optical phonons, ionized dopants, trapped charge, and interface roughness are considered. Transport within (0001) and (112¯0) oriented inversion layers are compared. Simulations of the MOSFET low-field mobility, incorporating previously published experimental results for threshold voltages and charge densities, are found to agree well with experimental results. The mobility of the (112¯0) channel is much larger (90 cm2/V s) than that of the (0001) channel (<40 cm2/V s) due to a reduction in interface states. Furthermore, the mobility has a temperature coefficient of approximately −3/2 for (112¯0) layers due to dominant phonon scattering and +1...