Shunt-Zero Based on CMOS Split-Drain: A Practical Approach for Current Sensing
Shunt-Zero Based on CMOS Split-Drain: A Practical Approach for Current Sensing
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基于 CMOS 分裂漏极的零分流：一种实用的电流检测方法
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
C. Filho
中科院分区：
文献类型：
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作者：
F. Castaldo;P. Rodrigues;C. Filho
设计了一种用于集成智能电源应用的电流传感器电路，其特征在于电流隔离。它基于使用CMOS兼容的分裂漏极晶体管（MAGFET）的磁检测，该晶体管提供从DC到几MHz范围的线性输出电流与磁场。采用0.35 mum CMOS工艺的集成传感器的输出转换因子为500 nA/A，转折频率约为1 MHz，热谱密度为60 pA/radiHz，功耗小于15 mW
A current sensor circuit intended for integrated smart-power applications featuring galvanic isolation is devised. It is based on magnetic detection using the CMOS compatible split-drain transistors (MAGFET) that provides linear output current versus magnetic field from DC to several MHz range. An integrated sensor built in 0.35 mum CMOS technology presented an output conversion factor of 500 nA/A, corner frequency around 1 MHz and thermal spectral density of 60 pA/radicHz for a power dissipation of less than 15 mW