Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry
Ex situ tunnel junction process technique characterized by Coulomb blockade thermometry
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以库仑封锁测温为特征的异位隧道结工艺技术
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
J. Pekola
中科院分区：
文献类型：
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作者：
M. Prunnila;M. Meschke;D. Gunnarsson;S. Enouz;J. Kivioja;J. Pekola
作者研究了一种晶圆级隧道结制造方法，其中等离子体蚀刻通过覆盖底部Al电极的介电层限定隧道结区域。通过在结区中氧化底部电极来形成非原位隧道势垒。在150 mm晶片上的室温电阻映射给出了低于7.5%的隧道结电阻的局部偏差值，平均值为1.3%。的偏差进一步调查的设备，其中有一个隧道结连接到四个阵列组成的N结（N=41，结直径700 nm）的子-1 K测量。微分电导测量单结和阵列库仑阻塞温度计的工作模式。通过将实验数据与理论模型拟合，作者发现对于2N+1结阵列，局部隧道结电阻偏差的上限为± 5%。该值与由...定义的最小可检测偏差具有相同的量级。
The authors investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer gives local deviation values of the tunnel junction resistance that fall below 7.5% with an average of 1.3%. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N=41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models, the authors found an upper limit for the local tunnel junction resistance deviation of ∼5% for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by ...