Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes
Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes
复制标题
载流子泄漏对 InGaN/GaN 发光二极管效率下降的影响
DOI：
10.1142/s0217984916502213
复制
发表时间：
2016-07-30
影响因子：
1.9
通讯作者：
Li, Jinmin
中科院分区：
文献类型：
--
作者：
Hunag, Yang;Liu, Zhiqiang;Li, Jinmin
A new model for efficiency droop in InGaN/GaN light-emitting diodes (LEDs) is proposed, where the primary nonradiative recombination mechanisms, including Shockley Read Hall (SRH), Auger and carrier leakage, are considered. A room-temperature external quantum efficiency (EQE) measurement was performed on our designed samples and analyzed by the new model. Owing to advantages over the common "ABC + f(n) model", the "new model" is able to effectively extract recombination coefficients and calculate the leakage currents of the hole and electron. From this new model, we also found that hole leakage is distinct at low injection, while it disappears at high injection, which is contributed to the weak blocking effect of electron in quantum wells (QWs) at low injection.
