Chemical approach to the realization of electronic devices in epitaxial graphene
Chemical approach to the realization of electronic devices in epitaxial graphene
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DOI：
10.1002/pssr.200903110
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发表时间：
2009-09-01
影响因子：
2.8
通讯作者：
Haddon, Robert C.
中科院分区：
文献类型：
--
作者：
Bekyarova, Elena;Itkis, Mikhail E.;Haddon, Robert C.
我们已经表明，硝基苯基基团可以通过形成共价碳-碳键添加到少层外延石墨烯（EG）的表面，从而改变EG的电子结构和输运性质，从近金属到半导体。在这封信中，我们讨论了这种化学过程所提供的机会，通过修改电子特性而无需物理图案化来设计石墨烯中的器件功能。(c)2009 WILEY-VCH Verlag GmbH & Co. KGaA.魏因海姆
We have shown that nitrophenyl groups may be added to the surface of few-layer epitaxial graphene (EG) by the formation of covalent carbon-carbon bonds thereby changing the electronic structure and transport properties of EG from near-metallic to semiconducting. In the present Letter we discuss the opportunities afforded by such chemical processes to engineer device functionality in graphene by modification of the electronic properties without physical patterning. (c) 2009 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim