Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy
Efficient switching of 3-terminal magnetic tunnel junctions by the giant spin Hall effect of Pt85Hf15 alloy
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DOI：
10.1063/1.5021077
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发表时间：
2018-02-05
影响因子：
4
通讯作者：
Buhrman, R. A.
中科院分区：
文献类型：
--
作者：
Minh-Hai Nguyen;Shi, Shengjie;Buhrman, R. A.
最近的研究表明，引入增加Pt电阻率的杂质可以提高其产生的自旋霍尔扭矩的效率。在这里，我们直接证明了这种策略的有用性，通过制造原型3端面内磁化的磁性隧道结，利用自旋霍尔扭矩从Pt85Hf15合金和测量的临界电流切换。我们发现，Pt85Hf15减少了开关电流密度相比，纯Pt的准静态斜坡电流偏置和纳秒级电流脉冲的约2倍，从而证明了这种方法的可行性，在协助开发高效的嵌入式磁存储器技术。出版社：AIP Publishing
Recent research has indicated that introducing impurities that increase the resistivity of Pt can enhance the efficiency of the spin Hall torque it generates. Here, we directly demonstrate the usefulness of this strategy by fabricating prototype 3-terminal in-plane-magnetized magnetic tunnel junctions that utilize the spin Hall torque from a Pt85Hf15 alloy and measuring the critical currents for switching. We find that Pt85Hf15 reduces the switching current densities compared to pure Pt by approximately a factor of 2 for both quasi-static ramped current biases and nanosecond-scale current pulses, thereby proving the feasibility of this approach in assisting the development of efficient embedded magnetic memory technologies. Published by AIP Publishing.