Ultrahigh electron mobility in suspended graphene
Ultrahigh electron mobility in suspended graphene
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DOI：
10.1016/j.ssc.2008.02.024
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发表时间：
2008-06-01
影响因子：
2.1
通讯作者：
Stormer, H. L.
中科院分区：
文献类型：
--
作者：
Bolotin, K. I.;Sikes, K. J.;Stormer, H. L.
我们通过悬浮单层石墨烯，在电子密度接近2x 10（11）cm（-2）时，实现了超过200，000 cm（2）V（-1）s（-1）的迁移率。悬浮类似于150纳米以上的Si/SiO2栅电极和电接触的石墨烯是通过电子束光刻和蚀刻的组合来实现的。通过采用电流感应加热原位清洁试样，直接导致电输运的显着改善。伴随着大的迁移率增强，特征狄拉克峰的宽度减少了10倍相比，传统的，nonsuspended设备。这一进展应该允许访问石墨烯的固有传输特性。(C)2008爱思唯尔有限公司保留所有权利。
We have achieved mobilities in excess of 200,000 cm(2) V(-1)s(-1) at electron densities of similar to 2x10(11) cm(-2) by suspending single layer graphene. Suspension similar to 150 nin above a Si/SiO2 gate electrode and electrical contacts to the graphene was achieved by a combination of electron beam lithography and etching. The specimens were cleaned in situ by employing current-induced heating, directly resulting in a significant improvement of electrical transport. Concomitant with large mobility enhancement, the widths of the characteristic Dirac peaks are reduced by a factor of 10 compared to traditional, nonsuspended devices. This advance should allow for accessing the intrinsic transport properties of graphene. (C) 2008 Elsevier Ltd. All rights reserved.