Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)(4)-Based Solar Cells
Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)(4)-Based Solar Cells
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硒化温度和时间对Cu2ZnSn(S,Se)(4)基太阳能电池功率转换效率的影响机制
DOI：
10.1021/acsami.6b05201
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
Wang Gang
中科院分区：
文献类型：
--
作者：
Xiao Zhen Yu;Yao Bin;Li Yong Feng;Ding Zhan Hui;Gao Zhong Min;Zhao Hai Feng;Zhang Li Gong;Zhang Zhen Zhong;Sui Ying Rui;Wang Gang
在镀Mo的玻璃衬底上制备了Cu 2 ZnSn（S，Se）4（CZTSSe）薄膜，并采用简单的溶液法和后硒化技术成功地制备了CZTSSe基太阳能电池。通过研究太阳电池的并联电导（Gsh）、串联电阻（Rs）、二极管理想因子（n）、电流密度（Jsc）、开路电压（Voc）和填充因子（FF）的变化，系统研究了硒化温度和时间对太阳电池的功率转换效率（PCE）、短路电流密度（Jsc）、开路电压（Voc）和填充因子（FF）的影响机理，以及饱和电流密度（J 0）与CZTSSe薄膜和CZTSSe/Mo界面的结构和晶体质量的关系。结果表明，在500 °C时，CZTSSe/Mo界面处存在六方结构的Mo（S1-x，Sex）2（MSSe）层，其厚度随硒化温度和时间的增加而增加。MSSe对Rs的影响较小，但对Gsh、n和J 0的影响较大。PCE、Voc和FF随Gsh、n和J 0的变化占主导地位，而Jsc随R和Gsh的变化占主导地位，但不随Rs的变化。这些结果表明，硒化温度和时间对PCE的影响主要是由于硒化过程中CZTSSe薄膜质量和MSSe厚度的变化引起的CZTSSe/CdS p-n结和CZTSSe/MSSe界面的变化。通过对硒化温度和时间的优化，获得了最高的7.48%的PCE。
Cu2ZnSn(S,Se)4(CZTSSe) films were deposited on the Mo-coated glass substrates, and the CZTSSe-based solar cells were successfully fabricated by a facile solution method and postselenization technique. The influencing mechanisms of the selenization temperature and time on the power conversion efficiency (PCE), short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) of the solar cell are systematically investigated by studying the change of the shunt conductance (Gsh), series resistance (Rs), diode ideal factor (n), and reversion saturation current density (J0) with structure and crystal quality of the CZTSSe film and CZTSSe/Mo interface selenized at various temperatures and times. It is found that a Mo(S1–x,Sex)2(MSSe) layer with hexagonal structure exists at the CZTSSe/Mo interface at the temperature of 500 °C, and its thickness increases with increasing selenization temperature and time. The MSSe has a smaller effect on theRs, but it has a larger influence on theGsh,n, andJ0. The PCE,Voc, and FF change dominantly withGsh,n, andJ0, whileJscchanges withRsandGsh, but notRs. These results suggest that the effect of the selenization temperature and time on the PCE is dominantly contributed to the change of the CZTSSe/CdS p–n junction and CZTSSe/MSSe interface induced by variation of the quality of the CZTSSe film and thickness of MSSe in the selenization process. By optimizing the selenization temperature and time, the highest PCE of 7.48% is obtained.