Highly-efficient and all-solution-processed red-emitting InP/ZnS-based quantum-dot light-emitting diodes enabled by compositional engineering of electron transport layers
Highly-efficient and all-solution-processed red-emitting InP/ZnS-based quantum-dot light-emitting diodes enabled by compositional engineering of electron transport layers
复制标题
通过电子传输层的组成工程实现高效、全溶液处理的 InP/ZnS 基红光发光二极管
DOI：
10.1039/c9tc01608b
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发表时间：
2019
影响因子：
6.4
通讯作者：
Aiwei Tang
中科院分区：
文献类型：
--
作者：
Fei Chen;Peiwen Lv;Xu Li;Zhenbo Deng;Feng Teng;Aiwei Tang
我们报道了一种高效的InP/ZnS基红光量子点发光二极管（QD-LED）的制备方法，该方法采用全溶液处理技术，其中胶体ZnO纳米颗粒（NPs）具有定制的组成作为电子传输层（ETL）。通过在ZnO纳米颗粒中掺入不同价态和离子半径的金属掺杂剂，可以控制ETL的光学带隙、能级和电荷注入能力，以ZnO：Mg纳米颗粒作为ETL的QD-LED显示出比其他同类器件更优越的上级器件性能。通过对ZnO：Mg NPs表面Cl离子的合理钝化，在全溶液处理的InP/ZnS基红光QD-LED中成功实现了4.24%的外量子效率（ηEQE）。最大亮度达到创纪录的5595 cd m-2。Cl@ZnO：Mg纳米颗粒不仅提供了良好匹配的电荷平衡，而且还防止了界面激子解离，促进了器件性能的增强。这项工作显示了一种有效的成分调制界面工程策略，用于提高全溶液处理的QD-LED的性能。
We report highly-efficient red-emitting InP/ZnS-based quantum-dot light-emitting diodes (QD-LEDs) fabricated via an all-solution-processed technique, in which colloidal ZnO nanoparticles (NPs) with tailoring compositions act as the electron transport layers (ETLs). The optical band gap, energy level and charge injection capability of ETLs can be manipulated by incorporation of various metal dopants with different valence states and ionic radii into ZnO NPs, and the QD-LEDs with ZnO:Mg NPs as the ETL exhibit a superior device performance over other counterparts. By rational passivation of Cl ions on the surface of ZnO:Mg NPs, a record external quantum efficiency (ηEQE) of 4.24% is successfully realized in the all-solution-processed red-emitting InP/ZnS-based QD-LEDs. The maximum luminance reaches a record 5595 cd m−2. The Cl@ZnO:Mg NPs not only provide a well-matched charge balance but also prevent interfacial exciton dissociation, boosting the enhancement of device performance. This work shows an effective composition-modulated interfacial engineering strategy for improving the performance of all-solution-processed QD-LEDs.