On the mechanical strength of monocrystalline, multicrystalline and quasi‐monocrystalline silicon wafers: a four‐line bending test study
On the mechanical strength of monocrystalline, multicrystalline and quasi‐monocrystalline silicon wafers: a four‐line bending test study
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DOI：
10.1002/pip.2372
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发表时间：
2013-04
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影响因子：
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通讯作者：
J. Barredo;V. Parra;I. Guerrero;A. Fraile;L. Hermanns
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文献类型：
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作者：
J. Barredo;V. Parra;I. Guerrero;A. Fraile;L. Hermanns
准单晶硅片已成为光伏行业的关键创新，加入了传统基板的最有利特性：单晶直拉硅（Cz-Si）晶片的太阳能电池效率更高，多晶硅晶片的成本更低且形状完整。然而，准单晶锭生长可导致与典型Cz-Si工艺不同的缺陷结构。因此，基于低和高晶体缺陷密度的全新准单晶晶片的特性首次从机械角度进行了研究，将其强度与Cz-Si单晶和典型多晶材料的强度进行了比较。研究采用四线弯曲试验，并通过有限元模型进行模拟。对于分析，将失效应力拟合为三参数威布尔分布。在所有的情况下，发现高的机械强度。然而，由于扩展缺陷的明显密度，以大密度的体缺陷为特征的准单晶晶片显示出较低的断裂张力。版权所有© 2013约翰威利父子有限公司.
Quasi‐monocrystalline silicon wafers have appeared as a critical innovation in the PV industry, joining the most favorable characteristics of the conventional substrates: the higher solar cell efficiencies of monocrystalline Czochralski‐Si (Cz‐Si) wafers and the lower cost and the full square‐shape of the multicrystalline ones. However, the quasi‐monocrystalline ingot growth can lead to a different defect structure than the typical Cz‐Si process. Thus, the properties of the brand new quasi‐monocrystalline wafers, based on low and high crystal defect densities, have been for the first time studied from a mechanical point of view, comparing their strength with that of both Cz‐Si monocrystalline and typical multicrystalline materials. The study has been carried out employing the four line bending test and simulating them by means of FE models. For the analysis, failure stresses were fitted to a three‐parameter Weibull distribution. High mechanical strength was found in all the cases. However, the quasi‐monocrystalline wafers characterized by large density of bulk defects, due to the noticeable density of extended defects, showed lower fracture tensions. Copyright © 2013 John Wiley & Sons, Ltd.