Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen
Widening of optical bandgap of polycrystalline InN with a few percent incorporation of oxygen
复制标题
DOI：
10.1063/1.1622445
复制
发表时间：
2003-10
影响因子：
4
通讯作者：
M. Yoshimoto;Hiroaki Yamamoto;Wei Huang;H. Harima;J. Saraie;A. Chayahara;Y. Horino
中科院分区：
文献类型：
--
作者：
M. Yoshimoto;Hiroaki Yamamoto;Wei Huang;H. Harima;J. Saraie;A. Chayahara;Y. Horino
使用卢瑟福背散射和X-射线光电子能谱的组合测量多晶InN中的氧的绝对浓度。在500 °C下，使用在射频等离子体中产生的In金属和活性氮物种，通过分子束外延在石英和玻璃碳上生长多晶InN。随着氧浓度从1%增加到6%，多晶InN的光学带隙从1.55增加到2.27 eV。通常报道的光学带隙为1.9eV的多晶InN含有摩尔分数为3%的氧。
The absolute concentration of oxygen in polycrystalline InN was measured using a combination of Rutherford backscattering and x-ray photoemission spectroscopy. Polycrystalline InN was grown on quartz and glassy carbon at 500 °C by molecular-beam epitaxy using In metal and activated nitrogen species generated in rf plasma. The optical bandgap of polycrystalline InN increased from 1.55 to 2.27 eV with increasing oxygen concentration from 1% to 6%. Polycrystalline InN with an optical bandgap of 1.9 eV, which has often been reported, contains oxygen of a molar fraction of 3%.