Optical and electrical properties of evaporated amorphous silicon with hydrogen
Optical and electrical properties of evaporated amorphous silicon with hydrogen
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DOI：
10.1063/1.326333
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发表时间：
1979-05
影响因子：
3.2
通讯作者：
A. Ghosh;T. McMahon;E. Rock;H. Wiesmann
中科院分区：
文献类型：
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作者：
A. Ghosh;T. McMahon;E. Rock;H. Wiesmann
在各种沉积条件下研究了含氢蒸发非晶硅的光学和电学性质。红外测量表明，薄膜的氢含量与其他技术生产的 a-Si:H 薄膜相当。对于在~275-325°C的沉积温度下制备的样品，在~1.55 eV带隙以下的光学吸收系数测量为~100 cm−1。对于这些样品，研究了室温下的光响应和电导率的温度依赖性。发现暗电导率在 T≳300 K 时被热激活，激活能为 ∼0.75 eV。我们发现了 1 型光电导并研究了它对光强度的依赖性。当样品在真空中加热至~175°C，然后暴露在空气中时，它们表现出暗电导率和光电导率随时间的增加。通过在真空中重新退火，这种效应是可逆的。高温退火至 ∼450 °C 增加了光学...
The optical and electrical properties of evaporated amorphous silicon with hydrogen have been studied under various deposition conditions. Infrared measurements indicate that the hydrogen content of the films are comparable to a‐Si : H films produced by other techniques. The optical‐absorption coefficient below the band gap of ∼1.55 eV was measured to be ∼100 cm−1 for samples made at deposition temperatures of ∼275–325 °C. For these samples the photoresponse at room temperature and the temperature dependence of the conductivities were studied. Dark conductivities were found to be thermally activated for T≳300 K with activation energies of ∼0.75 eV. We found type‐1 photoconductivity and investigated its dependence on the light intensity. When samples were heated to ∼175 °C in a vacuum and then exposed to air, they exhibited time‐dependent increases in the dark conductivity and photoconductivity. This effect was reversible by a reanneal in a vacuum. High‐temperature anneals to ∼450 °C increased the optical ...