MoS2/h-BN heterostructures: controlling MoS2 crystal morphology by chemical vapor deposition
MoS2/h-BN heterostructures: controlling MoS2 crystal morphology by chemical vapor deposition
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DOI：
10.1007/s10853-017-0936-6
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发表时间：
2017-03
影响因子：
4.5
通讯作者：
A. Antonelou;T. Hoffman;J. Edgar;S. Yannopoulos
中科院分区：
文献类型：
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作者：
A. Antonelou;T. Hoffman;J. Edgar;S. Yannopoulos
基于二维材料交替层调整范德华异质结构的特性是一个新兴的研究领域，对电子学和光子学具有重要意义。 六方氮化硼（h-BN）对于二维材料来说是一种有吸引力的绝缘基材，因为它对层的性能的影响比二氧化硅小。在这项工作中，MoS2 层通过化学气相沉积 (CVD) 沉积在厚 h-BN 薄片上，厚 h-BN 薄片是机械剥离沉积在 Si/SiO2 基板上的。 CVD 提供了 h-BN 上 MoS2 的可控、大规模制备，减轻了此类异质结构的手动机械组装的缺点。电子显微镜显示，根据样品制备条件，平面内和垂直于基底的 MoS2 层以高产率生长。采用拉曼光谱和光致发光光谱来评估 h-BN 上生长的 MoS2 的光学和电子质量以及 MoS2 与支撑基板之间的相互作用。与二氧化硅相比，在 h-BN 上生长的 MoS2 层不易氧化，并且受到的电子扰动要弱得多。
Tuning the properties of van der Waals heterostructures based on alternating layers of two-dimensional materials is an emerging field of research with implications for electronics and photonics. Hexagonal boron nitride (h-BN) is an attractive insulating substrate for two-dimensional materials as it may exert less influence on the layer’s properties than silica. In this work, MoS2layers were deposited by chemical vapor deposition (CVD) on thick h-BN flakes mechanically exfoliated deposited on Si/SiO2substrates. CVD affords the controllable, large-scale preparation of MoS2on h-BN alleviating shortcomings of manual mechanical assembly of such heterostructures. Electron microscopy revealed that in-plane and vertical to the substrate MoS2layers were grown at high yield, depending on the sample preparation conditions. Raman and photoluminescence spectroscopy were employed to assess the optical and electronic quality of MoS2grown on h-BN as well as the interactions between MoS2and the supporting substrate. Compared to silica, MoS2layers grown on h-BN are less prone to oxidation and are subjected to considerably weaker electronic perturbation.