Hall effect in strained La0.85Ba0.15MnO3thin films
Hall effect in strained La0.85Ba0.15MnO3thin films
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DOI：
10.1103/physrevb.71.012403
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发表时间：
2005-01
影响因子：
3.7
通讯作者：
T. Kanki;T. Yanagida;B. Vilquin;Hidekazu Tanaka;T. Kawai
中科院分区：
文献类型：
--
作者：
T. Kanki;T. Yanagida;B. Vilquin;Hidekazu Tanaka;T. Kawai
Unique properties concerning the Curie temperature $({T}_{C})$ of lightly doped ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Ba}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}$ thin films $(0.05\ensuremath{\leqslant}x\ensuremath{\leqslant}0.2)$ possessing tensile strain from the substrate have been discovered. It was found that ${T}_{C}$ increased significantly up to room temperature with decreasing film thickness. The purpose of this study was to employ Hall measurements to delineate the fundamental electric parameters associated with the observed enhancement in ${T}_{C}$. The ${T}_{C}$ of a fabricated ${\mathrm{La}}_{0.85}{\mathrm{Ba}}_{0.15}\mathrm{Mn}{\mathrm{O}}_{3}$ epitaxial thin film increased from 258 K for a 729-nm-thick above room temperature (305 K) for 24-nm-thick film. The carrier density of films with various thickness was found to be almost constant $(\ensuremath{\sim}6\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3})$ at 10 K, whereas the Hall mobility dramatically increased, from $5\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.1em}{0ex}}\mathrm{s}$ for the 729-nm-thick film to $50\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.1em}{0ex}}\mathrm{s}$ for the 24-nm-thick film. These results indicated that the enhancement in ${T}_{C}$ was induced by an increase in carrier transfer resulting from lattice deformation of Mn-$\mathrm{O}$-Mn networks rather than an increase in carrier density associated with ionic vacancy.
Unique properties concerning the Curie temperature $({T}_{C})$ of lightly doped ${\mathrm{La}}_{1\ensuremath{-}x}{\mathrm{Ba}}_{x}\mathrm{Mn}{\mathrm{O}}_{3}$ thin films $(0.05\ensuremath{\leqslant}x\ensuremath{\leqslant}0.2)$ possessing tensile strain from the substrate have been discovered. It was found that ${T}_{C}$ increased significantly up to room temperature with decreasing film thickness. The purpose of this study was to employ Hall measurements to delineate the fundamental electric parameters associated with the observed enhancement in ${T}_{C}$. The ${T}_{C}$ of a fabricated ${\mathrm{La}}_{0.85}{\mathrm{Ba}}_{0.15}\mathrm{Mn}{\mathrm{O}}_{3}$ epitaxial thin film increased from 258 K for a 729-nm-thick above room temperature (305 K) for 24-nm-thick film. The carrier density of films with various thickness was found to be almost constant $(\ensuremath{\sim}6\ifmmode\times\else\texttimes\fi{}{10}^{20}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3})$ at 10 K, whereas the Hall mobility dramatically increased, from $5\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.1em}{0ex}}\mathrm{s}$ for the 729-nm-thick film to $50\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{2}∕\mathrm{V}\phantom{\rule{0.1em}{0ex}}\mathrm{s}$ for the 24-nm-thick film. These results indicated that the enhancement in ${T}_{C}$ was induced by an increase in carrier transfer resulting from lattice deformation of Mn-$\mathrm{O}$-Mn networks rather than an increase in carrier density associated with ionic vacancy.