Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102
Artificial domain structures realized by local gallium focused ion-beam modification of Pt/Co/Pt trilayer transport structure - art. no. 123102
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DOI：
10.1063/1.2149500
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发表时间：
2005-12-15
影响因子：
3.2
通讯作者：
Marrows, CH
中科院分区：
文献类型：
--
作者：
Aziz, A;Bending, SJ;Marrows, CH
我们证明了高分辨率的Ga聚焦离子束可以在铂(1.6 nm)/钴(0.5 nm)/铂(3.5 nm)三层输运结构中引入人工磁畴结构。我们用薄的SiO_2覆盖层来控制Ga离子在铂/钴界面的有效能量和剂量。利用超乎寻常的霍尔效应(EHE)表征了图案化薄膜的磁性。使用30keV的Ga离子和0-24 nm范围内的SiO_2覆盖层，我们实现了对我们的铂/钴/铂三层结构的矫顽场的完全控制。用EHE研究了尺寸为3×0.5微米(2)的人工磁畴的磁化反转机制。(C)2005年美国物理研究所。
We demonstrate that a high-resolution Ga focused ion beam can be used to introduce artificial domain structures in Pt(1.6 nm)/Co(0.5 nm)/Pt(3.5 nm) trilayer transport structures. We have used thin SiO2 overlayers to control the effective energy and dose of Ga ions at the Pt/Co interface. The extraordinary Hall effect (EHE) was used to characterize the magnetic properties of the patterned films. Using 30 keV Ga ions and SiO2 overlayer thicknesses in the range of 0-24 nm, we achieve complete control of the coercive field of our Pt/Co/Pt trilayer structures. The magnetization reversal mechanism for an artificial domain of size of 3x0.5 mu m(2) is investigated using EHE. (c) 2005 American Institute of Physics.