Group-velocity dispersion in SOI-based channel waveguides with reduced-height
Group-velocity dispersion in SOI-based channel waveguides with reduced-height
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DOI：
10.1364/oe.25.009761
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发表时间：
2017-05-01
期刊：
影响因子：
3.8
通讯作者：
Minzioni, Paolo
中科院分区：
文献类型：
--
作者：
Marchetti, Riccardo;Vitali, Valerio;Minzioni, Paolo
我们报告的实验表征，在电信C波段，群速度色散（D）在100纳米高的矩形条形波导实现绝缘体上硅技术。我们比较实验结果与数值预测，表明100 nm高的波导表现出正常的色散和色散系数D的绝对值随着波导宽度的增加而减小。通过将波导宽度从500 nm增加到800 nm，在1550 nm处的D从-8130变化到-3900 ps/（nm.km）。(C)2017美国光学学会
We report on the experimental characterization, in the telecom C-band, of group-velocity dispersion (D) in 100-nm high rectangular strip waveguides realized by silicon-on-insulator technology. We compare the experimental results with numerical predictions, showing that 100-nm high waveguides exhibit normal dispersion and that the absolute value of the dispersion coefficient D decreases as the waveguide width is increased. D at 1550 nm varies from -8130 to -3900 ps/(nm.km) by increasing the waveguide width from 500 to 800 nm. (C) 2017 Optical Society of America