Charge collection efficiency measurements for segmented silicon detectors irradiated to 1x1016 n cm−2
Charge collection efficiency measurements for segmented silicon detectors irradiated to 1x1016 n cm−2
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辐射至 1x1016 n cm−2 的分段硅探测器的电荷收集效率测量
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
P. Allport
中科院分区：
文献类型：
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作者：
G. Casse;A. Affolder;P. Allport
欧洲核子研究中心的大型强子对撞机（LHC）的分阶段升级计划进展顺利。一个接近十倍的改进，达到接近1035 cm 2 s-1的光度是升级机器的目标，称为超级大型强子对撞机（SLHC）。SLHC中最里面的跟踪器设备将暴露于超过1 × 1016 neq cm-2的强子辐射剂量。因此，在SLHC实验的跟踪系统中使用的探测器需要符合这些极端注量。分段n-条硅探测器薄（140微米）和标准（300微米）的p-型基板已照射中子不同的注量高达1 times 1016 n cm-2，其特征在于在电荷收集效率测量方面使用高速（40兆赫）模拟电子学。这些测量是第一次直接比较薄和厚硅微带装置的电荷收集性能作为未来超级对撞机相关的不同注量的函数。他们还为平面技术（微带和像素探测器）制造的分段传感器在这些极端剂量下收集的最大电荷设定了参考，从而可以预测可以在SLHC实验的内部跟踪系统中操作的硅探测器的功能。
Plans are well advanced for a phased upgrade program of the large hadron collider (LHC) at CERN. An improvement of nearly a factor of ten to reach a luminosity close to 1035 cm2 s-1 is the target of the upgraded machine, called the super LHC (SLHC). The innermost tracker devices in the SLHC will be exposed to hadron radiation doses in excess of 1times1016 neq cm-2. The detectors to be used in the tracker system of the SLHC experiments need therefore to be qualified to these extreme fluences. Segmented n-strip silicon detectors made with thin (140 mum) and standard (300 mum) p-type substrates have been irradiated with neutrons to different fluences up to 1times1016 n cm-2 and characterised in term of charge collection efficiency measurements using high speed (40 MHZ) analogue electronics. These measurements are the first direct comparison between the charge collection performances of thin and thick silicon microstrip devices as a function of different fluences relevant to future supercolliders. They also set a reference for the maximum collected charge by segmented sensors made in planar technologies (microstrip and pixel detectors) at these extreme doses, allowing for predictions on the functionality of silicon detectors that can operated in the inner tracking system of SLHC experiments.