Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields
Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields
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DOI：
10.1063/1.4917061
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发表时间：
2015-05-07
影响因子：
3.2
通讯作者：
Nishii, J.
中科院分区：
文献类型：
--
作者：
Kaiju, H.;Kasa, H.;Nishii, J.
我们研究了利用杂散磁场的自旋量子交叉（SQC）器件中夹在硼酸盐玻璃之间的Co薄膜电极的结构和磁性对Co厚度的依赖性。我们还计算了在SQC器件中的Co薄膜电极的两个边缘之间的杂散场的Co厚度依赖于使用微磁学模拟。硼酸盐玻璃上的厚度小于20 nm的Co薄膜的表面粗糙度被示出为小至0.18 nm，在相同的扫描尺度的Co膜厚度，和的磁滞回线的方形度被示出为大至0.96-1.0。作为一个结果，建立的抛光技术的钴薄膜电极之间的硼酸盐玻璃夹，我们成功地证明了形成光滑的钴边缘和杂散磁场从钴边缘的产生。理论计算表明，当Co厚度大于10 nm，结隙距离为5 nm时，会产生大于6 kOe的强杂散场。从这些实验和计算结果可以得出结论，具有10-20 nm的Co厚度的SQC器件可以预期用作自旋过滤器器件。(C)2015 AIP Publishing LLC.
We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96-1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10-20 nm can be expected to function as spin-filter devices. (C) 2015 AIP Publishing LLC.