Synthesis of Ti-Al alloys by ion-beam-enhanced deposition
Synthesis of Ti-Al alloys by ion-beam-enhanced deposition
复制标题
离子束增强沉积法合成钛铝合金
DOI：
10.1016/0257-8972(94)90055-8
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发表时间：
1994
影响因子：
5.4
通讯作者：
S. Miyake
中科院分区：
文献类型：
--
作者：
Y. Setsuhara;H. Ohsako;Y. Makino;S. Miyake
采用离子束增强沉积（IBED）技术，在能量范围为2-20 keV的Ar离子同时轰击下，通过气相沉积Ti和Al金属制备了Ti-Al薄膜。实验进行了使用一个紧凑的IBED系统与桶型2.45 GHz的电子回旋共振离子源和电子束蒸发源。卢瑟福背散射光谱的结果表明，在Al衬底和Ti膜之间的有效混合的同时与Ar离子轰击下沉积的存在。掠射角X射线衍射分析表明，Ti-Al薄膜的相结构由Ar离子能量和Ar/（Ti + Al）输运比共同决定。
Titanium aluminide (Ti-Al) thin films were synthesized by ion-beam-enhanced deposition (IBED), where the films were prepared by depositing Ti and Al metal vapour under simultaneous bombardment with Ar ions in the energy range 2–20 keV. Experiments were undertaken using a compact IBED system with a bucket-type 2.45 GHz electron cyclotron resonance ion source and an electron beam evaporation source. Results of Rutherford backscattering spectrometry have suggested the presence of effective mixing between Al substrate and Ti film deposited under simultaneous bombardment with Ar ions. Glancing angle X-ray diffraction patterns showed that the phase structure of Ti-Al films was determined by both the Ar ion energy and the Ar/(Ti + Al) transport ratio.