Epitaxial growth of BP-like Bi(110) with moiré pattern and potential topological edge state
Epitaxial growth of BP-like Bi(110) with moiré pattern and potential topological edge state
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DOI:
10.1016/j.apsusc.2023.157596
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发表时间:
2023-05
影响因子:
6.7
通讯作者:
Yun-liang Wang;Yechan Song;Limei Wang;Limin She;Weifeng Zhang
中科院分区:
文献类型:
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作者:
Yun-liang Wang;Yechan Song;Limei Wang;Limin She;Weifeng Zhang
Black-phosphorus-like (BP-like) Bi(1 1 0) thin film, a potential large band gap two-dimensional (2D) topological insulator (TI) candidate that hosts a non-dissipative topological edge state, has attracted a lot of attention in recent years. However, the Bi(1 1 0) thin film with a large bulk band gap and topological edge states has not been definitely confirmed experimentally. Here, high-quality BP-like Bi(1 1 0) thin film is epitaxially grown on a semiconductor SnSe substrate. Employing scanning tunneling microscopy/spectroscopy (STM/S), the BP-like structure was determined, and the corresponding electronic structure was also investigated. In addition, a distinct quasi-squared moiré pattern was observed, and the electronic states far away from Fermi energy in the 1BL Bi(1 1 0) film are significantly modulated by the moiré pattern spatially; instead, the electronic states near the Fermi energy are less influenced by the moiré pattern. Importantly, we also observed the enhanced states at the edge of 1BL and 2BL Bi(1 1 0) films, especially for 2BL film, with a clear sign of edge state peak extending to 2 nm depth, suggesting that 2BL BP-like Bi(1 1 0) on SnSe is a potential 2D TI. As a result, our research provides a platform for the further topological investigation of the BP-like Bi(1 1 0) thin film.