Ultra-high hole mobility exceeding one million in a strained germanium quantum well
Ultra-high hole mobility exceeding one million in a strained germanium quantum well
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DOI：
10.1063/1.4763476
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发表时间：
2012-10-22
影响因子：
4
通讯作者：
Leadley, D. R.
中科院分区：
文献类型：
--
作者：
Dobbie, A.;Myronov, M.;Leadley, D. R.
在本文中，我们报告了锗二维空穴气体中的霍尔迁移率为一百万。在12K时观察到载片密度为3×10(11)cm(-2)时具有1.1×10(6)cm(2)V-1s(-1)的极高空穴迁移率。这种流动性比之前报道的任何流动性都要高出近一个数量级。根据基于弛豫时间近似的材料结构分析和迁移率建模，我们将这一结果归因于高纯度Ge通道和通过减压化学气相沉积生长方法实现的非常低的背景杂质水平的组合。 (C) 2012 年美国物理研究所。 [http://dx.doi.org/10.1063/1.4763476]
In this paper, we report a Hall mobility of one million in a germanium two-dimensional hole gas. The extremely high hole mobility of 1.1 x 10(6) cm(2) V-1 s(-1) at a carrier sheet density of 3 x 10(11) cm(-2) was observed at 12K. This mobility is nearly an order of magnitude higher than any previously reported. From the structural analysis of the material and mobility modeling based on the relaxation time approximation, we attribute this result to the combination of a high purity Ge channel and a very low background impurity level that is achieved from the reduced-pressure chemical vapor deposition growth method. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4763476]