Luminescence from stacking faults in gallium nitride
Luminescence from stacking faults in gallium nitride
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DOI：
10.1063/1.1852085
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发表时间：
2005-01-10
影响因子：
4
通讯作者：
Khan, MA
中科院分区：
文献类型：
--
作者：
Liu, R;Bell, A;Khan, MA
在3.29 ~ 3.41 eV范围内，A -平面GaN薄膜的层错与发光峰之间建立了直接相关关系。利用衍射对比透射电镜分析了层错的结构特征，利用高空间分辨单色阴极发光技术观察了层错的光学发射特性。这些研究是在薄箔的完全相同的区域进行的。我们发现基面上的层错是导致近3.14 eV强发射的主要原因。在3.33 eV附近和3.29 eV附近的发光峰分别与棱柱面上存在层错和层错边界处的部分位错有关。(C) 2005美国物理研究所。
A direct correlation has been established between stacking faults in a-plane GaN epilayers and luminescence peaks in the 3.29-3.41 eV range. The structural features of the stacking faults were determined by diffraction-contrast transmission electron microscopy, while the optical emission characteristics were observed by highly spatially resolved monochromatic cathodoluminescence. The studies were performed in the exact same regions of thinned foils. We find that stacking faults on the basal plane are responsible for the strong emission at similar to3.14 eV. Luminescence peaks at similar to3.33 and similar to3.29 eV are associated with the presence of stacking faults on prismatic a planes and partial dislocations at the stacking fault boundaries, respectively. (C) 2005 American Institute of Physics.