A 92 mW, 20 dB gain, broadband lumped SiGe amplifier with bandwidth exceeding 67 GHz
A 92 mW, 20 dB gain, broadband lumped SiGe amplifier with bandwidth exceeding 67 GHz
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92 mW、20 dB 增益、宽带集总 SiGe 放大器，带宽超过 67 GHz
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Hochberg
中科院分区：
文献类型：
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作者：
Z. Xuan;R. Ding;T. Baehr‐Jones;M. Hochberg
一个紧凑的，高能效的宽带放大器是在0.13微米的SiGe BiCMOS工艺证明。该放大器采用集总设计拓扑结构，具有并联反馈达林顿输入级和射极跟随器缓冲共源共栅后置放大器级。整个放大器消耗92 mW的直流功率，并表现出20 dB的增益。报告的67 GHz带宽受到可用测试设备的限制，提取后模拟3 dB带宽为82 GHz，这意味着增益带宽（GBW）为820 GHz。该放大器具有低群延迟变化特性，可实现高数据速率。从1 GHz到100 GHz，提取后的模拟群延迟为13+/-2 ps。芯片包括焊盘在内的面积为0.28 mm 2，而包括所有有源器件和峰值电感在内的核心面积仅为0.04 mm 2。假设带宽分别为67 GHz和82 GHz，该放大器的GBW/Pdc优值分别为7.3和8.9 GHz/mW，这是迄今为止的最佳结果。
A compact, power-efficient broadband amplifier is demonstrated in a 0.13-micron SiGe BiCMOS process. The amplifier uses a lumped design topology with a shunt-feedback Darlington input stage and an emitter-follower buffered cascode post-amplifier stage. The overall amplifier consumes 92 mW DC power, and exhibits 20-dB gain. The reported 67-GHz bandwidth is limited by available test equipment, and the post-extraction simulated 3-dB bandwidth is 82 GHz, which implies a gain-bandwidth (GBW) of 820 GHz. The amplifier features a low group delay variation to enable high data rate. The post-extraction simulated group delay is 13+/-2 ps from 1 GHz to 100 GHz. The chip occupies an area of 0.28 mm2 including pads, and the core area is only 0.04 mm2, which includes all active devices and peaking inductors. This amplifier shows a figure-of-merit GBW/Pdc of 7.3 and 8.9 GHz/mW, assuming bandwidth of 67 GHz and 82 GHz respectively, which are among the best results to date.