Synthesis and single crystal growth of the new high-pressure phase of GaOOH
Synthesis and single crystal growth of the new high-pressure phase of GaOOH
复制标题
GaOOH新型高压相的合成与单晶生长
DOI：
10.1016/j.jallcom.2007.04.244
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发表时间：
2008
影响因子：
6.2
通讯作者：
N. Bendeliani
中科院分区：
文献类型：
--
作者：
N. Nikolaev;L. Lityagina;T. I. Dyuzheva;L. Kulikova;N. Bendeliani
在超临界水蒸气存在下，在p=8.5GPa和T=400℃条件下，获得了正常条件下亚稳的GaOOH高压相。β-GaOOH的结构与InOOH的结构类型有关（正交，P21nm， Z=2）。晶格参数为：a=4.893±0.001Å；b = 4.338±0.001;c = 2.958±0.001;ρcalc = 5.43克/立方厘米。生长出大小约为0.125mm×0.125mm×0.650mm的透明无色晶体。
New high-pressure phase of GaOOH which is metastable under normal conditions has been obtained at p=8.5GPa and T=400°C in presence of supercritical aqueous vapor. The structure of β-GaOOH was related to InOOH structure type (orthorhombic, P21nm, Z=2). The lattice parameters are: a=4.893±0.001Å; b=4.338±0.001Å; c=2.958±0.001Å; ρcalc=5.43g/cm3. Transparent colorless crystals with a size of about 0.125mm×0.125mm×0.650mm were grown.