Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements
Evaluation of GaN HEMT degradation by means of pulsed I-V, leakage and DLTS measurements
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DOI：
10.1049/el.2009.0533
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发表时间：
2009-04
影响因子：
1.1
通讯作者：
A. Chini;M. Esposto;G. Meneghesso;E. Zanoni
中科院分区：
文献类型：
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作者：
A. Chini;M. Esposto;G. Meneghesso;E. Zanoni
首次用电流深能级瞬变谱(DLTS)测量方法研究了短期阶跃应力对GaN HEMTs性能的影响。当受到高反向栅偏压时，器件的漏极电流分散度以及栅极电流都会增加。在应力实验期间进行的电流DLTS测量表明，器件退化可能与以0.5 eV的能量热激活的缺陷的形成有关。
The effects of short-term step-stress on the performance of GaN HEMTs have been evaluated for the first time by means of current deep-level-transient-spectroscopy (DLTS) measurements. When subjected to high reverse gate bias the devices experienced an increase in the drain current dispersion as well as in the gate current. Current DLTS measurements carried out during the stress experiment show that the device degradation can be associated to the formation of a defect that is thermally activated with an energy of 0.5 eV.