Effect of B doping on optical, electrical properties and defects of ZnO films
Effect of B doping on optical, electrical properties and defects of ZnO films
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B掺杂对ZnO薄膜光学、电学性能及缺陷的影响
DOI：
10.1016/j.jallcom.2016.03.157
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发表时间：
2016-08-15
影响因子：
6.2
通讯作者：
Kong, Chunyang
中科院分区：
文献类型：
--
作者：
Mao, Caiying;Fang, Liang;Kong, Chunyang
采用射频磁控溅射技术在石英玻璃基板上沉积硼含量在 0-6 at.% 范围内的硼掺杂 ZnO (BZO) 薄膜。通过 XRD、SEM、AFM、XPS、PL、紫外-可见-近红外分光光度计和霍尔效应测量系统研究了 B 掺杂含量对 BZO 薄膜微观结构、光学和电学性能的影响。研究发现，当B掺杂含量增加到不大于4at.%时，ZnO薄膜的晶体质量得到改善，而当B掺杂含量较高时，ZnO薄膜的晶体质量会变差。随着B掺杂量的增加，薄膜的晶粒尺寸和表面粗糙度减小。 BZO 薄膜表现出拉伸应力，并且应力随着 B 含量的增加而增加。 BZO 薄膜在可见光区域的透射率为 90%。随着 B 掺杂含量从 0 at.% 增加到 6 at.%，BZO 薄膜的光学带隙从 3.28 eV 增加到 3.57 eV，并且随着薄膜中的拉伸应力线性增加。当 B 掺杂含量为 2 at.% 时，电阻率最低为 1.58 x 10(-3) (Ω cm)。 XPS和PL分析表明B掺杂可以促进锌间隙原子(Zn-i)和氧空位(V-O)缺陷的形成。 (C) 2016 Elsevier B.V. 保留所有权利。
Boron doped ZnO (BZO) films with B content in the range of 0-6 at.% were deposited on quartz glass substrates by RF magnetron sputtering technique. The effects of B doping content on microstructure, optical and electrical properties of BZO films were systematically investigated by XRD, SEM, AFM, XPS, PL, UV-vis-near infrared spectrophotometer and Hall-effect measurement, respectively. It is found that the crystal quality of ZnO films can be improved as B doping content increases to no larger than 4 at.% and will be deteriorated at higher B doping content. The grain size and surface roughness of the films reduce with the increase of B doping content. The BZO films exhibit tensile stress and the stress increases with B content. The transmittance of the BZO films is revealed to be 90% in the visible region. As the B doping content increases from 0 to 6 at.%, the optical band gap of BZO films enhances from 3.28 to 3.57 eV, which is found to increase linearly with the tensile stress in the films. The lowest resistivity of 1.58 x 10(-3) (Omega cm) is obtained at 2 at.% B doping content. XPS and PL analyses demonstrated that B doping can promote the formation of defects of zinc interstitials (Zn-i) and oxygen vacancies (V-O). (C) 2016 Elsevier B.V. All rights reserved.