CIS layer deposition through electrospray process for solar cell fabrication
CIS layer deposition through electrospray process for solar cell fabrication
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DOI：
10.1016/j.cap.2010.11.059
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发表时间：
2011-01-01
影响因子：
2.4
通讯作者：
Choi, Kyung-Hyun
中科院分区：
文献类型：
--
作者：
Muhammad, Nauman Malik;Sundharam, Sridharan;Choi, Kyung-Hyun
本文讨论了一种新的CIS膜沉积技术，即电喷雾沉积（ESD）技术。采用静电放电技术制备了铜铟硒薄膜，用于CIS基太阳能电池的最终制造。CIS纳米颗粒油墨用于ESD工艺中，用于在ITO涂覆的基板上沉积类似于2 μ m的CIS层，由此ITO涂层可用作太阳能电池的背接触。还检查了影响ESD工艺和沉积层厚度和均匀性的不同参数，例如间隔距离、流速和电压，以提出优化的参数组合。在0.5mm/s和1.0mm/s两种不同的衬底速度下获得了具有良好均匀性的层。当流速从30 μ l/h变化到230 μ l/h时，沉积膜的厚度从400 nm变化到2.7 μ m，当间距从13 mm变化到6 mm时，沉积膜的厚度从2.8 μ m变化到1.3 μ m。ESD工艺的环境友好性和简单性，并可能与卷到卷等高产量制造工艺集成，辊工艺使其成为大规模部署在太阳能电池制造过程中的理想候选者。(C)2010年爱思唯尔B。V.保留所有权利。
A rather new technique for the deposition of CIS layer has been discussed in this paper namely Electrospray Deposition (ESD). Thin films composed of Copper-Indium-diSelenide, have been achieved using the ESD technique for the ultimate manufacture of CIS based solar cell. CIS nano-particle inks are used in the ESD process for the deposition of similar to 2 mu m CIS layers on ITO coated substrates whereby ITO coating can be used as the back contact of the solar cell. Different parameters affecting the ESD process and the deposited layer thickness and uniformity such as stand- off distance, flow rate and voltage have been examined as well to come up with an optimized parameter combination. Layers with fine uniformity are achieved at two different substrate speeds, 0.5mm/s and 1.0 mm/s. The thickness of the deposited films varied from 400nm to 2.7 mu m with varying flow rate from 30 mu l/h to 230 mu l/h and 2.8 mu m-1.3 mu m with varying stand-off distance from 13 mm to 6 mm. The cost-effectiveness, room-temperature operation, environment friendliness and simplicity of ESD process with its possible integration with high throughput manufacturing processes like Roll-to-Roll process makes it an idyllic candidate for deployment in the solar cell fabrication process at a large scale. (C) 2010 Elsevier B. V. All rights reserved.