Evolution of the Electron Yield Curves of Insulators as a Function of Impinging Electron Fluence and Energy

Evolution of the Electron Yield Curves of Insulators as a Function of Impinging Electron Fluence and Energy
复制标题

绝缘体电子产额曲线随撞击电子注量和能量的变化

DOI:
10.1109/tps.2006.883398
复制
发表时间:
2006
影响因子:
1.5
通讯作者:
C. Thomson
C. Thomson
中科院分区:
物理与天体物理3区
文献类型:
--
作者:
J. R. Dennison;A. Sim;C. Thomson

文献摘要

参考文献

被引文献

相似文献

绝缘体表面附近的电子发射和伴随的电荷积累对于理解航天器充电至关重要。提出了由于电子剂量导致内部电荷积累而导致电子发射产率变化的研究。给出了两种代表性绝缘体 Kapton 和 Al2O3 在较宽的入射能量范围内的总产率、后向散射产率和二次产率结果的演变。测量了不带电绝缘体的可靠屈服曲线,并观察到由于 <100-fC/mm2 能量密度而产生的可量化的屈服变化。发现与基于收益率曲线预测的绝缘体充电的现象学论证非常一致;这包括当入射能量接近交叉能量时以及当累积的内部电荷减少着陆能量以渐近地接近稳态表面电荷和单位产量时产量变化率的减小。还发现,收益率曲线随注量的指数衰减表现出与能量相关的衰减常数 α(E)。最后,讨论了这种能量依赖性的基于物理的模型。了解这些充电过程的注量和能量依赖性需要了解电荷如何沉积在绝缘体内、绝缘体内电荷俘获和传输的机制以及俘获电荷的分布如何影响绝缘体电荷的传输和发射
Electron emission and concomitant charge accumulation near the surface of insulators is central to understanding spacecraft charging. A study of changes in electron emission yields as a result of internal charge buildup due to electron dose is presented. Evolution of total, backscattered, and secondary yield results over a broad range of incident energies are presented for two representative insulators, Kapton and Al2O3. Reliable yield curves for uncharged insulators are measured, and quantifiable changes in yields are observed due to <100-fC/mm2 fluences. Excellent agreement with a phenomenological argument based on insulator charging predicted by the yield curve is found; this includes a decrease in the rate of change of the yield as incident energies approach the crossover energies and as accumulated internal charge reduces the landing energy to asymptotically approach a steady state surface charge and unity yield. It is also found that the exponential decay of yield curves with fluence exhibit an energy-dependent decay constant alpha(E). Finally, physics-based models for this energy dependence are discussed. Understanding fluence and energy dependence of these charging processes requires knowledge of how charge is deposited within the insulator, the mechanisms for charge trapping and transport within the insulator, and how the profile of trapped charge affects the transport and emission of charges from insulators
DOI: --
发表时间: 2007
期刊: IEEE Trans. DEI Vol.14, No.2
影响因子: --
作者:
H. Miyake;Y. Tanaka
通讯作者: Y. Tanaka