Tuning the exchange bias training effect in top and bottom pinning FeNi/FeMn bilayers
Tuning the exchange bias training effect in top and bottom pinning FeNi/FeMn bilayers
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DOI：
10.1002/pssa.201084190
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发表时间：
2010-11
期刊：
影响因子：
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通讯作者：
M. Yang;J. Ge;J. Zhang;Y. Yang;B. You;J. Du;A. Hu
中科院分区：
文献类型：
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作者：
M. Yang;J. Ge;J. Zhang;Y. Yang;B. You;J. Du;A. Hu
在这项工作中，顶部和底部钉扎FeNi/FeMn双膜制备溅射与外部场施加在膜平面在沉积过程中。训练过程是用矢量振动样品磁强计（VVSM）进行的，通过该磁强计可以同时测量Mx和My。在调谐过程之前，相对于初始PD以六度的角度测量十个回路，以将训练效应消除到非常低的程度。然后垂直于初始PD施加600 Oe的面内调谐场五分钟。在整个过程中，PD的旋转在每次M-H回路测量和每次调谐过程之后立即用My = 0和Mx =最大值来识别[3]。
In this presented work, both top and bottom pinning FeNi/FeMn bialyers were prepared by sputtering with an external field applied in the film plane during deposition. The training processes were performed with a vector vibrating sample magnetometer (VVSM) through which Mx and My can be measured simultaneously. Before the tuning process, ten loops were measured at an angle of six degrees with respect to the initial PD, to eliminate the training effect to a very low extent. Then an in-plane tuning field of 600 Oe was applied perpendicular to the initial PD for five minutes. During the whole process, the rotation of the PD is identified with My = 0 and Mx = Maximum immediately after each M-H loop measurement and each tuning process [3].