Optical properties of d-doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium
Optical properties of d-doped ZnSe:Te grown by molecular beam epitaxy: The role of tellurium
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分子束外延生长的 d 掺杂 ZnSe:Te 的光学特性:碲的作用
DOI:
10.1103/physrevb.63.155205
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发表时间:
2001
影响因子:
3.7
通讯作者:
M. Tamargo
中科院分区:
文献类型:
--
作者:
I. Kuskovsky;C. Tian;G. Neumark;J. Spanier;I. Herman;W. Lin;S. Guo;M. Tamargo
We have studied the optical properties of the {delta}-doped ZnSe:Te system using photoluminescence (PL) and x-ray and Raman scattering. Two different types of sample were investigated, (1) with a single {delta} layer and (2) with three adjacent {delta} layers separated by undoped layers. All of these samples are of reasonable crystalline quality and have the symmetry of the host ZnSe lattice as determined by x-ray and Raman scattering. The PL from each sample is very similar to the PL from bulk Zn-Se-Te solutions at low Te concentrations. The PL from the single-{delta}-doped material shows emission relatively close to the band edge which we attribute partly to Te{sub 2} clusters (nearest-neighbor pairs) and partly to non-nearest pairs. This PL changes with storage time, from which we conclude that the nearest-neighbor pairs are more stable than non-nearest-neighbor pairs. The triple-{delta}-doped material also shows a deeper PL feature, with a peak at about 2.48 eV, which we attribute to Te{sub n{>=}3} clusters as well as to corresponding non-nearest-neighbors pairs.