Microscopic mechanism of hydrogen intercalation: On the conversion of the buffer layer on SiC to graphene
Microscopic mechanism of hydrogen intercalation: On the conversion of the buffer layer on SiC to graphene
复制标题
氢插层的微观机制：SiC缓冲层向石墨烯的转化
DOI：
10.1103/physrevb.105.235442
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发表时间：
2022
影响因子：
3.7
通讯作者：
Norimatsu Wataru
中科院分区：
文献类型：
--
作者：
Sakakibara Ryotaro;Norimatsu Wataru
我们报道了在碳化硅缓冲层转化为准独立石墨烯过程中氢渗透和迁移的微观机制。通过系统地观察初始阶段，我们发现氢嵌入在局部和整个阶地同时开始，随后插入区域扩大，导致SiC表面缓冲层的完全石墨化。这表明氢可以穿透缓冲层。此外，我们发现SiC表面的台阶可以作为迁移屏障，阻碍氢在跨台阶界面的迁移。这一系列的实验结果为氢嵌入的基本机制提供了重要的见解，并可能有助于为石墨烯电子学铺平道路。
We report an investigation of the microscopic mechanism of hydrogen penetration and migration in the conversion process of the buffer layer on SiC into quasi-freestanding graphene. By systematically observing the initial stage, we found that hydrogen intercalation initiates locally and simultaneously throughout the terrace, followed by the expansion of the intercalated area, resulting in full graphenization of the buffer layer over the SiC surface. This suggests that hydrogen can penetrate the buffer layer. In addition, we found that the steps on the SiC surface can act as a migration barrier, hindering the migration of hydrogen at the interface across the steps. This series of experimental results provides important insights into the fundamental mechanism of hydrogen intercalation and may help to pave the way toward graphene electronics.