Quenching of the exciton-spin relaxation via exchange interaction in GaAs / Al x Ga 1 − x As quantum wells
Quenching of the exciton-spin relaxation via exchange interaction in GaAs / Al x Ga 1 − x As quantum wells
复制标题
通过 GaAs / Al x Ga 1 − x As 量子阱中的交换相互作用淬灭激子自旋弛豫
DOI：
10.1103/physrevb.65.115336
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发表时间：
2002
影响因子：
3.7
通讯作者：
Z. Wasilewski
中科院分区：
文献类型：
--
作者：
J. Urdanivia;F. Iikawa;M. Z. Maialle;J. Brum;P. Hawrylak;Z. Wasilewski
研究了GaAs/AlGaAs量子威尔斯中电子气对激子自旋弛豫的影响。我们观察到连续波极化度和激子自旋弛豫时间随电子密度的增加而增加。这些结果解释激子束缚态的淬灭的基础上。因此，自旋弛豫的变化从一个占主导地位的长程激子交换相互作用的内在激子跃迁的空穴自旋弛豫时，在电子气的存在下。实验结果与掺杂样品中激子自旋弛豫时间的计算结果定性一致。
We studied the influence of the electron gas on the exciton spin relaxation in GaAs/AlGaAs quantum wells. We observed an increase of the continuous-wave degree of polarization and the exciton spin relaxation time with theelectron density. These results are interpreted based on the quenching of the exciton bound state. As a consequence, the spin relaxation changes from one dominated by the long-range exciton exchange interaction for intrinsic excitonic transitions to one dominated by the hole spin relaxation when in the presence of the electron gas. The experimental results are in qualitative agreement with calculations of the exciton spin relaxation time in doped samples.