Origins of improved hole-injection efficiency by the deposition of MoO 3 on the polymeric semiconductor poly(dioctylfluorenealt- benzothiadiazole) (Advanced Functional Materials (2009) 19 (3746))
Origins of improved hole-injection efficiency by the deposition of MoO 3 on the polymeric semiconductor poly(dioctylfluorenealt- benzothiadiazole) (Advanced Functional Materials (2009) 19 (3746))
复制标题
通过在聚合物半导体聚(二辛基芴醇-苯并噻二唑)上沉积MoO 3 提高空穴注入效率的起源(Advanced Function Materials (2009) 19 (3746))
DOI：
--
复制
发表时间：
2010
期刊：
影响因子：
--
通讯作者：
H. Ishii
中科院分区：
文献类型：
--
作者：
Y. Nakayama;Katsuyuki Morii;Y. Suzuki;H. Machida;S. Kera;N. Ueno;H. Kitagawa;Y. Noguchi;H. Ishii
