Experimental verification of the Shockley--Read--Hall recombination theory in silicon
Experimental verification of the Shockley--Read--Hall recombination theory in silicon
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DOI：
10.1049/el:19730279
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发表时间：
1973-08
影响因子：
1.1
通讯作者：
Wayne F. Zimmerman
中科院分区：
文献类型：
--
作者：
Wayne F. Zimmerman
在硅功率器件中测量了载流子寿命与注入水平的关系。作为例子，结果的Au掺杂和处理，而不是故意掺杂，标本。实验结果证实了Shockley-Read-Hall复合理论。计算了空穴和电子的俘获截面比。
The dependence of carrier lifetime on injection level has been measured in silicon power devices. As examples, the results of an Au-doped and an as-processed, not intentionally doped, specimen are given. The experimental results confirm the Shockley–Read–Hall recombination theory. The ratio of the capture cross-sections of the holes and electrons is calculated.