An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.
An optical spectroscopic study on two-dimensional group-VI transition metal dichalcogenides.
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DOI：
10.1039/c4cs00265b
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发表时间：
2015-04
影响因子：
46.2
通讯作者：
H. Zeng;X. Cui
中科院分区：
文献类型：
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作者：
H. Zeng;X. Cui
制造原子级薄电子器件的最终目标刺激了对层状材料的深入研究，特别是vi族过渡金属二硫族化合物（TMDs）。原子薄的六族TMD晶体具有2H堆叠顺序，是一种具有相当大的可见光和近红外带隙的本征二维（2D）半导体，满足了最终电子学和光电子学的许多要求。此外，在单层tmd中表现出的特征逆对称性破缺导致位于第一布里温区角落的K/K谷的Berry曲率和轨道磁矩不为零。这些特征提供了操纵电子额外的内部自由度的机会，即谷自由度，使单层tmd成为概念谷电子学的有希望的候选者。此外，在原子薄群vi tmd中显示的强自旋轨道相互作用和随后的自旋谷耦合为量子操纵开辟了潜在的途径。在本教程中，我们重点介绍了MoS2， MoSe2， WS2和WSe2这类原子二维半导体的电子结构，振动性质，激子效应，谷依赖的光学选择规则以及谷，自旋和层自由度的相互作用的光学研究的最新进展。
The ultimate goal of making atomically thin electronic devices stimulates intensive research on layered materials, in particular the group-VI transition metal dichalcogenides (TMDs). Atomically thin group-VI TMD crystals with a 2H stacking order emerging as a family of intrinsic 2-dimensional (2D) semiconductors with a sizeable bandgap in the visible and near infrared range satisfy numerous requirements for ultimate electronics and optoelectronics. In addition, the characteristic inversion symmetry breaking presented in monolayer TMDs leads to non-zero but contrasting Berry curvatures and orbit magnetic moments at K/K' valleys located at the corners of the first Brillouin zone. These features provide an opportunity to manipulate electrons' additional internal degrees of freedom, namely the valley degree of freedom, making monolayer TMDs a promising candidate for the conceptual valleytronics. Besides, the strong spin-orbit interactions and the subsequent spin-valley coupling demonstrated in atomically thin group-VI TMDs open up potential routes towards quantum manipulation. In this tutorial review, we highlight recent advances in the optical study on electronic structures, vibrational properties, excitonic effects, valley dependent optical selection rules, and the interplay of valley, spin, and layer degrees of freedoms in this class of atomic 2D semiconductors including MoS2, MoSe2, WS2, and WSe2.